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PD - 97229
PDP SWITCH
Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability
IRFP4228PBF
Key Parameters
150 180 12 170 175
D
VDS min VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100C TJ max
D
V V m: A C
G S
S D G
TO-247AC
G
D
S
Gate
Drain
Source
Description This HEXFET(R) Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS ID @ TC = 25C ID @ TC = 100C IDM IRP @ TC = 100C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw
Max.
30 78 55 330 170 310 150 2.0 -40 to + 175 300 10lbxin (1.1Nxm) Typ. --- 0.24 --- Max. 0.49 --- 40
Units
V A
c
g
W W/C C
N Units C/W
Thermal Resistance
RJC RCS RJA Junction-to-Case
f
Parameter
Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Notes through are on page 8
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IRFP4228PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgd tst EPULSE Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Drain Charge Shoot Through Blocking Time Energy per Pulse
Min.
150 --- --- 3.0 --- --- --- --- --- 170 --- --- 100 --- ---
Typ. Max. Units
--- 150 12 --- -14 --- --- --- --- --- 72 26 --- 58 110 4530 550 100 480 4.5 7.5 --- ---
Conditions
VGS = 0V, ID = 250A V mV/C Reference to 25C, ID = 1mA 15.5 m VGS = 10V, ID = 33A VDS = VGS, ID = 250A 5.0 V
e
--- 20 1.0 100 -100 --- 110 --- --- --- --- --- --- --- --- ---
mV/C A VDS = 150V, VGS = 0V mA VDS = 150V, VGS = 0V, TJ = 125C nA S nC ns J VGS = 20V VGS = -20V VDS = 25V, ID = 50A VDD = 120V, ID = 50A, VGS = 10Ve VDD = 120V, VGS = 15V, RG= 5.1 L = 220nH, C= 0.3F, VGS = 15V VDS = 120V, RG= 5.1, TJ = 25C L = 220nH, C= 0.3F, VGS = 15V VDS = 120V, RG= 5.1, TJ = 100C VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 0V to 120V Between lead, nH 6mm (0.25in.) from package and center of die contact
G S D
Ciss Coss Crss Coss eff. LD LS
Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance
--- --- --- --- --- ---
pF
---
Avalanche Characteristics
Parameter Typ. Max. Units mJ mJ V A
EAS EAR VDS(Avalanche) IAS
Single Pulse Avalanche Energyd Repetitive Avalanche Energy Repetitive Avalanche VoltageA Avalanche CurrentAd
--- --- 180 ---
210 33 --- 50
Diode Characteristics
Parameter
IS @ TC = 25C Continuous Source Current ISM VSD trr Qrr (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min.
--- --- --- --- ---
Typ. Max. Units
--- --- --- 76 230 78 A 330 1.3 110 350 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 50A, VGS = 0V TJ = 25C, IF = 50A, VDD = 50V di/dt = 100A/s
e
e
2
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IRFP4228PBF
1000
TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V
1000
TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
1 5.0V 0.1
10
5.0V
60s PULSE WIDTH
Tj = 25C 0.01 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V) 1 0.1 1
60s PULSE WIDTH
Tj = 175C 10 100 1000
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
Fig 2. Typical Output Characteristics
3.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
3.0 2.5 2.0 1.5 1.0 0.5 0.0
ID = 50A VGS = 10V
100
T J = 175C
10
T J = 25C
1 VDS = 25V 60s PULSE WIDTH 0.1 3 4 5 6 7 8 9 10 11
-60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
120 110 100 L = 220nH C = 0.3F 100C 25C
VGS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
120 110 100 L = 220nH C = Variable 100C 25C
Energy per Pulse (J)
Energy per Pulse (J)
100 105 110 115 120 125
90 80 70 60 50 40 30 20 85
90 80 70 60 50 40 30 20 10
90
95
60
65
70
75
80
85
90
95 100 105
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical EPULSE vs. Drain Current
ID, Peak Drain Current (A)
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IRFP4228PBF
140 L = 220nH 120
ISD, Reverse Drain Current (A)
1000
Energy per Pulse (J)
100 80 60 40 20 0 20 40 60 80 100 120 140 160 C = 0.1F C = 0.3F
100
T J = 175C
10
T J = 25C
C = 0.2F
1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V)
Temperature (C)
Fig 7. Typical EPULSE vs.Temperature
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C oss = C ds + C gd
Fig 8. Typical Source-Drain Diode Forward Voltage
12.0 ID= 50A
VGS, Gate-to-Source Voltage (V)
C rss = C gd
10.0 8.0 6.0 4.0 2.0 0.0
10000
C, Capacitance (pF)
VDS= 120V VDS= 75V VDS= 30V
Ciss 1000 Coss Crss
100
10 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge (nC)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
90 80 70
ID, Drain Current (A)
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
60 50 40 30 20 10 0 25 50 75 100 125 150 175 T J , Junction Temperature (C)
100
100sec
10msec
1msec
10 Tc = 25C Tj = 175C Single Pulse 1 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Drain Current vs. Case Temperature
Fig 12. Maximum Safe Operating Area
4
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IRFP4228PBF
RDS(on) , Drain-to -Source On Resistance (m)
60
EAS , Single Pulse Avalanche Energy (mJ)
900
ID = 50A 50 40 30 20 10 0 4 6 8 10 12 14 16 18 T J = 125C
800 700 600 500 400 300 200 100 0 25 50 75 100
ID TOP 9.0A 19A BOTTOM 50A
TJ = 25C
125
150
175
Fig 13. On-Resistance vs. Gate Voltage
5.0
VGS(th) , Gate Threshold Voltage (V)
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Temperature
250 ton= 1s Duty cycle = 0.25 Half Sine Wave Square Pulse
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C )
0 25 50 75 100
Repetitive Peak Current (A)
200
ID = 250A
150
100
50
125
150
175
Case Temperature (C)
Fig 15. Threshold Voltage vs. Temperature
1 D = 0.50
Thermal Response ( Z thJC )
Fig 16. Typical Repetitive peak Current vs. Case temperature
0.1
0.20 0.10 0.05
0.01
0.02 0.01
J
R1 R1 J 1 2
R2 R2
R3 R3 3 C 3
Ri (C/W) i (sec) 0.0768 0.000083 0.2337 0.1797 0.001175 0.008326
1
2
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1
0.0001 1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP4228PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
*
* * * *
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
**
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 19a. Unclamped Inductive Test Circuit
Current Regulator Same Type as D.U.T.
Fig 19b. Unclamped Inductive Waveforms
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Qgs1 Qgs2 Qgd Qgodr
Current Sampling Resistors
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
6
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IRFP4228PBF
A
RG
DRIVER L
C
PULSE A
VCC
B
PULSE B
RG
Ipulse DUT
tST
Fig 21a. tst and EPULSE Test Circuit
Fig 21b. tst Test Waveforms
Fig 21c. EPULSE Test Waveforms
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TO-247AC Package Outline
IRFP4228PBF
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
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TO-247AC package is not recommended for Surface Mount Application. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.173mH, RG = 25, IAS = 50A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. Half sine wave with duty cycle = 0.25, ton=1sec.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/06
8
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